Journal Publications
Note 1: Asterisk (*) indicates corresponding author.
Note 2: Dagger (†) indicates equal contributions.
30. H. Sun, Z. Qi, Y. Kim, M. Luo, B. Yang, and D. Nam*, “Frequency-Tunable Terahertz Graphene Laser Enabled by Pseudomagnetic Fields in Strain-Engineered Graphene,” Opt. Express 29, 1892-1902 (2021) [PDF]
29. A. Dubrovkin*, B. Qiang, T. Salim, D. Nam, N. Zheludev*, and Q.Wang*, “Resonant Nanostructures for Highly Confined and Ultra-Sensitive Surface Phonon Polaritons,” Nature Commun. 11, 1863 (2020) [PDF]
28. Z. Song*, W. Fan, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band Structure of Strained Ge1-xSnx Alloy: a Full-Zone 30-Band k·p Model,” IEEE J. Quantum Electron. 56(1), 1-8 (2019) [PDF]
27. Z. Song, W. Fan*, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band Structure of Ge1-xSnx Alloy: a Full-Zone 30-Band k·p Model,” New J. Phys. 21, 073037 (2019) [PDF]
26. H. Joo, M. Shin, H. Jung, H. Cha, D. Nam, and H. Kwon*, “Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations,” Materials 12(23), 3815 (2019) [PDF]
25. Z. Qi, H. Sun, M. Luo, Y. Jung, and D. Nam*, "Strained Germanium Nanowire Optoelectronic Devices for Photonic-Integrated Circuits," J. Phys. Condens. Matter. 30(33), 334004 (2018) [PDF]
24. S. Gupta*, D. Nam, J. Vuckovic and K. Saraswat, "Room Temperature Lasing Unraveled by a Strong Resonance Between Gain and Parasitic Absorption in Uniaxially Strained Germanium," Phys. Rev. B 97(15), 155127 (2018) [PDF]
23. S. Bao†, D. Kim†, C. Onwukaeme†, S. Gupta†, K. Saraswat, K. Lee, Y. Kim, D. Min, Y. Jung, H. Qiu, H. Wang, E. A. Fitzgerald, C. Tan* and D. Nam*, "Low-Threshold Optically Pumped Lasing in Highly Strained Ge Nanowires," Nature Commun. 8(1), 1845 (2017) [PDF]
Featured in LaserFocusWorld, Channel NewsAsia, etc.
22. D. Kim, S. Bao, C. Tan, J. Nam, K. Saraswat and D. Nam*, “[Invited] The Effect of Germanium/Silicon Interface on Germanium Photonics,” ECS Transactions 75(8), 683-688 (2016) [PDF]
21. D. Sukhdeo†, Y. Kim†, K. Saraswat, B. Dutt and D. Nam*, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37(10), 1307-1310 (2016) [PDF]
20. J. Baek, B. Ki, D. Kim, C. Lee, D. Nam, Y. Cho, and J. Oh*, “Phosphorus Implantation into In-Situ Doped Ge-on-Si for High Light-Emitting Efficiency,” Opt. Mater. Express 6(9), 2939-2946 (2016) [PDF]
19. D. Sukhdeo†, Y. Kim†, S. Gupta, K. Saraswat, B. Dutt and D. Nam*, “Anomalous Threshold Reduction from Uniaxial Strain for a Low-Threshold Ge Laser,” Opt. Comm. 379, 32-35 (2016) [PDF]
18. J. Petykiewicz†, D. Nam†, D. Sukhdeo, S. Gupta, S. Buckley, A. Piggott, J. Vučković* and K. Saraswat*, “Direct Bandgap Light Emission from Strained Ge Nanowire Coupled with High-Q Optical Cavities,” Nano Lett. 16(4), 2168-2173 (2016) [PDF]
Featured in Dong-A Ilbo, Digital Times, Newsis, Asia Today, etc.
17. D. Sukhdeo, S. Gupta, K. Saraswat, B. Dutt and D. Nam*, “Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources,” Opt. Comm. 364, 233-237 (2016) [PDF]
16. D. Sukhdeo, S. Gupta, K. Saraswat, B. Dutt and D. Nam*, “Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser,” Jpn. J. Appl. Phys. 55(2), 024301 (2016) [PDF]
15. D. Sukhdeo, J. Petykiewicz, S. Gupta, D. Kim, S. Woo, Y. Kim, J. Vučković, K. Saraswat and D. Nam*, “Ge Microdisk with Lithographically-Tunable Strain Using CMOS-Compatible Process,” Opt. Express 23(26), 33249-33254 (2015) [PDF]
14. Y. Kim, J. Petykiewicz, S. Gupta, J. Vučković, K. Saraswat, and D. Nam*, “Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation,” IEIE SPC 4(5), 318-323 (2015) [PDF]
13. D. Sukhdeo, D. Nam*, J. Kang, M. Brongersma and K. Saraswat, “Bandgap-Customizable Germanium Using Lithographically Determined Biaxial Tensile Strain for Silicon-Compatible Optoelectronics,” Opt. Express 23(13), 16740-16749 (2015) [PDF]
12. J. Nam*, F. Afshinmanesh, D. Nam, W. Jung, T. Kamins, M. Brongersma, and K. Saraswat, “Monolithic Integration of Germanium-on-Insulator P-I-N Photodetector on Silicon,” Opt. Express 23(12), 15816-15823 (2015) [PDF]
11. J. Nam, S. Alkis, D. Nam, F. Afshinmanesh, J. Shim, J. Park, M. Brongersma, A. Okyay, T. Kamins and K. Saraswat*, “Lateral Overgrowth for Monolithic Integration of Germanium-on-Insulator on Silicon,” J. Cryst. Growth 416, 21-27 (2015) [PDF]
10. D. Nam*, J. Kang, M. Brongersma and K. Saraswat, “Observation of Improved Minority Carrier Lifetimes in High-Quality Ge-on-Insulator Using Time-Resolved Photoluminescence,” Opt. Lett. 39(21), 6205-6208 (2014) [PDF]
9. D. Nam, D. Sukhdeo, B. Dutt and K. Saraswat*, “[Invited] Light Emission from Highly-Strained Germanium for On-Chip Optical Interconnects,” ECS Transactions 64(6), 371-381 (2014) [PDF]
8. D. Nam, D. Sukhdeo, S. Gupta, J. Kang, M. Brongersma and K. Saraswat, “Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser,” IEEE J. Sel. Top. Quant. Electron. 20(4), 16-22 (2014) [PDF]
7. D. Sukhdeo, D. Nam*, J. Kang, M. Brongersma and K. Saraswat, “[Invited] Direct Bandgap Germanium-on-Silicon Inferred from 5.7% Uniaxial Tensile Strain,” Photonics Research 2(3), A8-A13 (2014) [PDF]
Highlights: Selected as #1 most cited paper during 2014-2015
6. B. Dutt, H. Lin, D. Sukhdeo, B. Vulovic, S. Gupta, D. Nam, K. Saraswat, and J. Harris, “Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser,” IEEE J. Sel. Top. Quant. Electron. 19(5), 1502706 (2013) [PDF]
5. D. Nam, D. Sukhdeo, J. Kang, J. Petykiewicz, J. Lee, W. Jung, J. Vuckovic, M. Brongersma*, and K. Saraswat*, “Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles,” Nano Lett. 13(7), 3118-3123 (2013) [PDF]
4. B. Dutt*, D. Sukhdeo, D. Nam, B. Vulovic, Z. Yuan, and K. Saraswat, “Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping,” IEEE Photon. J. 4(5), 2002-2009 (2012) [PDF]
3. W. Jung, J. Park, A. Nainani, D. Nam, and K. Saraswat, “Fluorine Passivation of Vacancy Defects in Bulk Ge Metal-Oxide-Semiconductor Field Effect Transistor Application,” Appl. Phys. Lett. 101(7), 072104 (2012) [PDF]
2. D. Nam, D. Sukhdeo, S. Cheng, K. Huang, A. Roy, M. Brongersma, Y. Nishi, and K. Saraswat, “Electroluminescence from Strained Ge Membranes and Implications for an Efficient Si-Compatible Laser,” Appl. Phys. Lett. 100(13), 131112 (2012) [PDF]
1. D. Nam*, D. Sukhdeo, A. Roy, K. Balram, S. Cheng, K. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller and K. Saraswat, “Strained Germanium Thin Film Membrane on Silicon Substrate for Optoelectronics,” Opt. Express 19(27), 25866-25872 (2011) [PDF]
Patent
6. Non-Drafted Singapore Patent Application: “Biaxially Strained Crossbeam Germanium Laser Structure,” D. Nam, D. Burt, Y. Jung, Y. Kim, H. Joo, Submitted on 16 Dec 2020
5. Non-Drafted Singapore Patent Application: “Graphene Nanopillar Structures for Giant Pseudo-Magnetic Fields,” D. Nam, D. Kang, M. Luo, H. Sun, X. Gao, K. Lu, Submitted on 15 Dec 2020
4. Non-Drafted Singapore Patent Application: “Triaxially Strained Graphene Structure for Large-Area Pseudo-Magnetic Field,” D. Nam, H. Sun, M. Luo, D. Burt, D. Kang, Submitted on 14 Dec 2020
3. Non-Drafted Singapore Patent Application, Application Number 10202012548S: “An Electrically Pumped Strained GeSn Laser Structure,” D. Nam, D. Burt, Y. Jung, Y. Kim, H. Joo, Filed on 15 Dec 2020
2. Non-Drafted Singapore Patent Application, Application Number 10201806832X: “Highly Strained Germanium Laser on A Silicon Platform,” D. Nam, C. Tan, Filed on 13 Aug 2018
1. US Patent No.0,372,455: “Crossed Nanobeam Structure for a Low-Threshold Germanium Laser,” D. Nam, J. Petykiewicz, D. Sukhdeo, S. Gupta, J. Vuckovic, K. Saraswat, Issued Sept. 9, 2015 [LINK]
