Journal Publications

Note 1: Asterisk (*) indicates corresponding author.
Note 2: Dagger (†) indicates equal contributions.

29. A. Dubrovkin, B. Qiang, T. Salim, D. Nam, N. Zheludev, and Q.Wang*, “Resonant Nanostructures for Highly Confined and Ultra-Sensitive Surface Phonon Polaritons,” Nature Comm. 11, 1863 (2020) [PDF]

28. Z. Song, W. Fan, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band Structure of Strained Ge1-xSnx Alloy: a Full-Zone 30-Band k·p Model,” IEEE J. Quantum Electron.* 56(1), 1-8 (2019) [PDF]

27. Z. Song, W. Fan, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band Structure of Ge1-xSnx Alloy: a Full-Zone 30-Band k·p Model,” New J. Phys.* 21, 073037 (2019) [PDF]

26. H. Joo, M. Shin, H. Jung, H. Cha, D. Nam, and H. Kwon, “Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations,” Materials* 12(23), 3815 (2019) [PDF]

25. Z. Qi, H. Sun, M. Luo, Y. Jung, and D. Nam, "Strained Germanium Nanowire Optoelectronic Devices for Photonic-Integrated Circuits," J. Phys. Condens. Matter.* 30(33), 334004 (2018) [PDF]

24. S. Gupta, D. Nam, J. Vuckovic and K. Saraswat, "Room Temperature Lasing Unraveled by a Strong Resonance Between Gain and Parasitic Absorption in Uniaxially Strained Germanium," Phys. Rev. B* 97(15), 155127 (2018) [PDF]

23. S. Bao†, D. Kim†, C. Onwukaeme†, S. Gupta†, K. Saraswat, K. Lee, Y. Kim, D. Min, Y. Jung, H. Qiu, H. Wang, E. A. Fitzgerald, C. Tan* and D. Nam, "Low-Threshold Optically Pumped Lasing in Highly Strained Ge Nanowires," Nature* Comm. 8(1), 1845 (2017) [PDF]
***Featured in* LaserFocusWorld, Channel NewsAsia, *etc.***

22. D. Kim, S. Bao, C. Tan, J. Nam, K. Saraswat and D. Nam*, “[Invited] The Effect of Germanium/Silicon Interface on Germanium Photonics,” ECS Transactions 75(8), 683-688 (2016) [PDF]

21. D. Sukhdeo†, Y. Kim†, K. Saraswat, B. Dutt and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett.* 37(10), 1307-1310 (2016) [PDF]

20. J. Baek, B. Ki, D. Kim, C. Lee, D. Nam, Y. Cho, and J. Oh, “Phosphorus Implantation into In-Situ Doped Ge-on-Si for High Light-Emitting Efficiency,” Opt. Mater. Express* 6(9), 2939-2946 (2016) [PDF]

19. D. Sukhdeo†, Y. Kim†, S. Gupta, K. Saraswat, B. Dutt and D. Nam, “Anomalous Threshold Reduction from Uniaxial Strain for a Low-Threshold Ge Laser,” Opt. Comm.* 379, 32-35 (2016) [PDF]

18. J. Petykiewicz†, D. Nam†, D. Sukhdeo, S. Gupta, S. Buckley, A. Piggott, J. Vučković* and K. Saraswat, “Direct Bandgap Light Emission from Strained Ge Nanowire Coupled with High-Q Optical Cavities,” Nano Lett. 16(4), 2168-2173 (2016) [PDF]
Featured in Dong-A Ilbo, Digital Times, Newsis, Asia Today*, etc.

17. D. Sukhdeo, S. Gupta, K. Saraswat, B. Dutt and D. Nam, “Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources,” Opt. Comm.* 364, 233-237 (2016) [PDF]

16. D. Sukhdeo, S. Gupta, K. Saraswat, B. Dutt and D. Nam, “Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser,” Jpn. J. Appl. Phys.* 55(2), 024301 (2016) [PDF]

15. D. Sukhdeo, J. Petykiewicz, S. Gupta, D. Kim, S. Woo, Y. Kim, J. Vučković, K. Saraswat and D. Nam, “Ge Microdisk with Lithographically-Tunable Strain Using CMOS-Compatible Process,” Opt. Express* 23(26), 33249-33254 (2015) [PDF]

14. Y. Kim, J. Petykiewicz, S. Gupta, J. Vučković, K. Saraswat, and D. Nam, “Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation,” IEIE SPC* 4(5), 318-323 (2015) [PDF]

13. D. Sukhdeo, D. Nam, J. Kang, M. Brongersma and K. Saraswat, “Bandgap-Customizable Germanium Using Lithographically Determined Biaxial Tensile Strain for Silicon-Compatible Optoelectronics,” Opt. Express* 23(13), 16740-16749 (2015) [PDF]

12. J. Nam, F. Afshinmanesh, D. Nam, W. Jung, T. Kamins, M. Brongersma, and K. Saraswat, “Monolithic Integration of Germanium-on-Insulator P-I-N Photodetector on Silicon,” Opt. Express* 23(12), 15816-15823 (2015) [PDF]

11. J. Nam, S. Alkis, D. Nam, F. Afshinmanesh, J. Shim, J. Park, M. Brongersma, A. Okyay, T. Kamins and K. Saraswat, “Lateral Overgrowth for Monolithic Integration of Germanium-on-Insulator on Silicon,” J. Cryst. Growth* 416, 21-27 (2015) [PDF]

10. D. Nam, J. Kang, M. Brongersma and K. Saraswat, “Observation of Improved Minority Carrier Lifetimes in High-Quality Ge-on-Insulator Using Time-Resolved Photoluminescence,” Opt. Lett.* 39(21), 6205-6208 (2014) [PDF]

9. D. Nam, D. Sukhdeo, B. Dutt and K. Saraswat, “[Invited] Light Emission from Highly-Strained Germanium for On-Chip Optical Interconnects,” ECS Transactions* 64(6), 371-381 (2014) [PDF]

8. D. Nam, D. Sukhdeo, S. Gupta, J. Kang, M. Brongersma and K. Saraswat, “Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser,” IEEE J. Sel. Top. Quant. Electron. 20(4), 16-22 (2014) [PDF]

7. D. Sukhdeo, D. Nam, J. Kang, M. Brongersma and K. Saraswat, “[Invited] Direct Bandgap Germanium-on-Silicon Inferred from 5.7% Uniaxial Tensile Strain,” Photonics Research* 2(3), A8-A13 (2014) [PDF]
Highlights: Selected as #1 most cited paper during 2014-2015

6. B. Dutt, H. Lin, D. Sukhdeo, B. Vulovic, S. Gupta, D. Nam, K. Saraswat, and J. Harris, “Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser,” IEEE J. Sel. Top. Quant. Electron. 19(5), 1502706 (2013) [PDF]

5. D. Nam, D. Sukhdeo, J. Kang, J. Petykiewicz, J. Lee, W. Jung, J. Vuckovic, M. Brongersma, and K. Saraswat, “Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles,” Nano Lett. 13(7), 3118-3123 (2013) [PDF]

4. B. Dutt, D. Sukhdeo, D. Nam, B. Vulovic, Z. Yuan, and K. Saraswat, “Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping,” IEEE Photon. J.* 4(5), 2002-2009 (2012) [PDF]

3. W. Jung, J. Park, A. Nainani, D. Nam, and K. Saraswat, “Fluorine Passivation of Vacancy Defects in Bulk Ge Metal-Oxide-Semiconductor Field Effect Transistor Application,” Appl. Phys. Lett. 101(7), 072104 (2012) [PDF]

2. D. Nam, D. Sukhdeo, S. Cheng, K. Huang, A. Roy, M. Brongersma, Y. Nishi, and K. Saraswat, “Electroluminescence from Strained Ge Membranes and Implications for an Efficient Si-Compatible Laser,” Appl. Phys. Lett. 100(13), 131112 (2012) [PDF]

1. D. Nam, D. Sukhdeo, A. Roy, K. Balram, S. Cheng, K. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller and K. Saraswat, “Strained Germanium Thin Film Membrane on Silicon Substrate for Optoelectronics,” Opt. Express* 19(27), 25866-25872 (2011) [PDF]

Patent

1. US Patent No.0,372,455: “Crossed Nanobeam Structure for a Low-Threshold Germanium Laser,” D. Nam , J. Petykiewicz, D. Sukhdeo, S. Gupta, J. Vuckovic and K. Saraswat, Issued Sept. 9, 2015